It has also been shown that different resonator shapes may lead to different rabi splittings, though this has not yet been well explained. Control of intersubband transitions in multiple quantum. Phonon assisted intersubband transitions in step quantum well structures h. The semiconductor physics group of the institute of physics. The potential energy profile in semiconductor heterostructures can now be controlled in a fascinating way that could barely be dreamed of twenty years ago 1. Ninth international conference on intersubband transitions in quantum wells selection rules for intersubband transitions in valley split 001sige quantum wells m. Nearinfrared intersubband transitions in ingaas alas. The system under study is a symmetric double semiconductor quantum well. Temperature dependence of intersubband transitions in. Midinfrared intersubband absorption from pge quantum wells with si0.
Intersubband optical transitions at short wavelengths in straincompensated in0. Intersubband transitions in semiconductor quantum wells are studied using a density matrix theory that goes beyond the hartreefock approximation by including the full second order electronelectron scattering terms in the polarization equation for the. Optical properties of solids lm herz trinity term 2014 recommended textbooks m fox, optical properties of solids, oxford university press py yu and m cardona, fundamentals of semiconductors, springer c kittel, introduction to solid state physics, wiley b saleh, m. Haddad department of electrical engineering and computer science, the university of michigan, ann arbor, michigan 481092122 michael a. Ultrafast alloptical switches based on intersubband. Tradeoffs between achieving a high transition energy and a large oscillator strength of the two highestenergy. The dynamics of intersubband transitions in a multiple quantum well system consisting of gaas coupled quantum wells separated by an al x ga 1.
Intersubband transitions in quantum wells how is intersubband transitions in quantum wells abbreviated. Binding energy of a screened donor in a cylindrical quantum wire under applied magnetic fields 65 where vd z,a0 is the laser dressed potential. Dasc arcc institute of information technology, beliaghata, kolkata 700015, india basansol engg. The nonperturbative theory for the nonlinear optical interaction of quantum well intersubband transitions is developed. We numerically solve the effective nonlinear bloch equations. The well width dependence of i intersubband transition energies in both in,ga,asalo.
The fermi level is below the n 1 subband minimum, so the excited subband is initially empty. Pdf quantum wells with multiple intersubband transitions. Photodetectors based on intersubband transitions using iii. The intersubband transition energies of 316 and 350 mev mea sured for the yo. Intersubband transitions in inganasgaas quantum wells. As a first step towards realizing such a thz source, we have conducted a systematic study of optical transitions in inas alsb quantum wells for a wide range of well widths. Introduction quantumwell qw intersubband resonances isbrs are known to be dressed up by collective excitations 1,2, as a consequence of the coulomb interaction among the electrons con. Ruiztijerina6, celal yelgel6, vladimir falko6, kristian thygesen3, rainer hillenbrand5,7, frank h. This thesis is a theoretical and experimental investigation of the intersubband transitions in quantum well structures.
Electrodynamic modeling of strong coupling between a. Ultrashort electromagnetic pulse control of intersubband. The operation principles and characteristics as an absorption saturation type device are described. The engineering and physical sciences research council epsrc, u. Purchase intersubband transitions in quantum wells. Interaction between metamaterial resonators and inter. However in quantum dots the vertical incident optical transition is quite strong. Sinclair2, eric shaner1 and igal brener1,2 1center for integrated nanotechnologies, sandia national laboratories, p. Electronic tuning of intersubband transition of inverted.
The transition energies are correlated with interband transition energies measured in the near infrared. Given that intersubband transitions isbt in quantum wells qws are one of the important ultrafast phenomena, a numerical study of intersubband transition isbt properties in cdsznsebete. An important numerical method for solving the problem of boundtocontinuum transitions. We have modeled the transitions using eightband kp theory combined with semiconductor bloch equations, including the main manybody effects. Intersubband transitions in inasalsb quantum wells. Assuming the photon density at the location of the quantum well to be np, the expressions for the rate of stimulated absorption r s,p, units. Intersubband transitions in quantum structures, paiella. Laser field effects on the interband transitions in differently shaped quantum wells 285 eg 1. Even though the spectral features remain qualitatively similar. Short wavelength intersubband transitions in ingaasalgaas. We have studied intersubband transitions in inasalsb quantum wells experimentally and theoretically. Intersubband transitions in high indium content ingaas. Spatial confinement effects on type ii quantum well.
Download it once and read it on your kindle device, pc, phones or tablets. Many of the papers presented in quantum well intersubband transition physics and devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. It is shown that very high current responsivities and high gain are obtained. Electronic tuning of intersubband transition of inverted coreshell cylindrical quantum wire for novel lasing performance arpan deyasia, s bhattacharyyab and n.
We find that for square arrays, the classical groundstate is an ising antiferroelectret afe, while the quantum groundstate undergoes a transition from a uniform state to an afe. Physics and device applications ii, volume 66 1st edition. It is shown that the gan barrier thickness t b is designed as 25 nm and the in composition is optimized to be 15% in ingan wells for both types. College, asansol, burdwan, west bengal 7305, india. Exciton absorption in semiconductor quantum wells driven by a strong intersubband pump field ansheng liu and c. Longwavelength quantumwell infrared detectors based on. Ning nasa ames research center, ms n2291, moffett field, ca 94035 department of electrical engineering, arizona state university, tempe, az. Ultrafast alloptical modulation by nearinfrared intersubband transition in ndoped ingaasalassb quantum wells a. Exciton absorption in semiconductor quantum wells driven. It is found that gain increases drastically when approaching detector voltages close to 8. The wide conduction band offset such as ganalgan heterostructs has extended the transitions into near infrared region. The ninth international conference on intersubband transitions in quantum wells low wood hotel, ambleside, cumbria, u.
In quantum wells this transition is forbidden in the conduction band subbands. We examine the intersubband transitions in this system and the selection rules are obtained for a light polarization vector parallel or perpendicular to the growth direction. E in the range of 128mev, e 14 in the range of 182mev, e 23 in the range of 142mev, and e. Good agreement of the intersubband transition energies to a single. We assume that only the two lower energy subbands, n 0 for the lowest subband and n 1 for the excited subband, contribute to the system dynamics.
A read is counted each time someone views a publication summary such as the title, abstract, and list of authors, clicks on a figure, or views or downloads the fulltext. When dealing with interband optical transitions, additional features related to electronhole interactions see for instance exciton descriptions in this book are coming into play and the oneelectron. Research on quantum cascade lasers has without any doubt become the most impressive. Use features like bookmarks, note taking and highlighting while reading intersubband transitions in quantum structures. Intersubband transitions in quantum wells springerlink. Specifically it is found that the lack of spatial confinement to the qw in the.
In this paper, our aim is to understand the correlation. Zalamai2 1technical university of moldova, stefan cel mare avenue168, chisinau, md2004 republic of moldova 2institute of applied physics of the academy of sciences of moldova. Designs for engineering intersubband transitions isbt in ganaln quantum wells near communication wavelengths 1. This important step could be realized in 1994 by faist et al at bell labs 6. Interband optical transitions in the region of exciton resonances in in 0. The iv characteristics, infrared absorption spectra, and photoresponse spectra of superlattices are used to characterize multiple quantum well structure properties in unipolar devices. Intersubband transitions in semiconductor quantum wells qws have been the subject of extensive research for the past several decades. Quantum well intersubband transition physics and devices. Box 12211, research triangle park, north carolina 277092211. Collective excitations in inas quantum well intersubband. Chapter 10 optical transitions in semiconductor quantum. We study the creation of highefficiency controlled population transfer in intersubband transitions of semiconductor quantum wells. Teich, fundamentals of photonics, wiley a yariv, quantum electronics, wiley.
The nonlinear optical response of intersubband transitions in quantum wells is rigorously derived and the implications of their resonantlyenhanced nature are examined. Because of very fast intraband relaxation in conduction band, we can obtain very fast response of around 1ps. Quantum well intersubband transition detection and. Similarly, inaslaisb quantum wells can be used for intersubbandpumped longwave generation. Chapter 10 optical transitions in semiconductor quantum wells. Intersubband transitions in quantum structures kindle edition by paiella, roberto. Intersubband transitions are observed in inganasgaas quantum wells at wavelengths around 10. Ultrafast alloptical switch based on intersubband transitions in ingaasalasalassb quantum well is described.
We give emphasis to the case of interaction of the semiconductor quantum well with electromagnetic pulses with a duration of few cycles and even a single cycle. Pdf ac stark splitting and quantum interference with. Manybody effects on intersubband resonances in narrow. Tradeoffs between achieving a high transition energy and a large oscillator strength of the two highestenergy intersubband transitions using our straincompensation approach. The optical transition rates in quantum wells can be calculated using fermis golden rule. Pdf electronic properties of intersubband transition in. Ingaasalgaas quantum wells qws grown on gaas substrates. Phonon assisted intersubband transitions in step quantum. Interband transitions of quantum wells and device structures containing gan, as and ga, inn, as.
The resonance energy redshifts with increasing temperature from 10 to 300 k, and the amount of redshift increases with decreasing well width. Pdf conduction band intersubband transitions in gesige. We will show results for intersubband optical transition in inas gaas and strain compensated quantum dots. Nearinfrared intersubband transitions in ingaasalas. Experimentally, we performed polarizationresolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature from 4 k to room temperature and quantum well width from a few. Intersubband transitions in quantum wells listed as itqw. Physics and device applications, volume 62 1st edition. Optical properties of solids lm herz trinity term 2014. Intersubband transition in ganingan multiple quantum wells. Theoretical and experimental results on ultrafast alloptical switches based on intersubband transitions for tbs operation are presented. The sample can be designed to have desired transition energies, i. Quantum wells with multiple intersubband transitions. However, in doped quantum wells, the thz radiation can excite an intersubband polarization directly, leading to a channel for sideband generation that has not been previously.
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